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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C IXFN40N90P VDSS ID25 RDS(on) trr = = 900V 33A 210m 300ns Maximum Ratings 900 900 30 40 33 80 20 1.5 20 695 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features International standard package miniBLOC, with Aluminium nitride isolation Avalanche Rated Low package inductance Fast intrinsic diode Advantages Low gate drive requirement High power density Applications: t = 1min t = 1s Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 20A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 900 3.5 6.5 200 V V nA Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 50 A 3 mA 210 m (c) 2008 IXYS CORPORATION, All rights reserved DS100062(10/08) IXFN40N90P Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 20A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 20A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 20A, Note 1 Gate input resistance Characteristic Values Min. Typ. Max. 18 30 1.5 14 896 58 53 50 77 46 230 70 100 S nF pF pF ns ns ns ns nC nC nC 0.18 C/W C/W SOT-227B Outline Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s VR = 100V Characteristic Values Min. Typ. Max. 40 160 1.5 300 1.7 14 A A V ns C A Note 1: Pulse test, t 300s; duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN40N90P Fig. 1. Output Characteristics @ 25C 40 35 30 VGS = 10V 9V 90 80 70 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes 25 20 15 8V ID - Amperes 60 50 40 30 20 7V 8V 7V 10 5 6V 0 0 1 2 3 4 5 6 7 8 9 10 6V 0 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 40 35 30 VGS = 10V 8V 3.0 2.8 2.6 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 I D = 40A I D = 20A ID - Amperes 25 20 15 10 5 6V 0 0 2 4 6 8 10 12 14 16 18 20 7V 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current 2.8 2.6 2.4 VGS = 10V TJ = 125C 40 35 30 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized 2.2 ID - Amperes TJ = 25C 0 10 20 30 40 50 60 70 80 90 2.0 1.8 1.6 1.4 25 20 15 10 1.2 1.0 0.8 5 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXFN40N90P Fig. 7. Input Admittance 55 50 45 40 55 50 45 40 TJ = 125C 25C - 40C 25C TJ = - 40C Fig. 8. Transconductance g f s - Siemens ID - Amperes 35 30 25 20 15 10 5 0 4.5 5.0 5.5 6.0 35 30 25 20 15 10 5 0 125C 6.5 7.0 7.5 8.0 8.5 0 5 10 15 20 25 30 35 40 45 50 55 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 16 VDS = 450V 14 100 12 I D = 20A I G = 10mA Fig. 10. Gate Charge IS - Amperes 80 VGS - Volts TJ = 125C TJ = 25C 10 8 6 60 40 4 20 2 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 0 50 100 150 200 250 300 350 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 Fig. 12. Maximum Transient Thermal Impedance 1.000 f = 1 MHz Capacitance - PicoFarads 10,000 Ciss 1,000 Coss Z(th)JC - C / W 30 35 40 0.100 0.010 100 Crss 10 0 5 10 15 20 25 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_40N90P(96)10-23-08 |
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